Product Summary

The MG100J6ES52 is a GTR module.

Parametrics

Absolute maximum ratings: (1)collector-emitter voltage, VCES: 600V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current: DC, IC: 100A; 1ms, ICP: 200A; (4)forward current: DC, IF: 100A; 1ms, IFM: 200A; (5)collector power dissipation ( TC=25℃), PC: 450W; (6)junction temperature, Tj: 150℃; (7)storage temperature range, Tstg: -40~125℃; (8)isolation voltage, VIsol: 2500 (AC 1min) V; (9)screw torque (Terminal/Mounting): 2/3 N·m.

Features

Features: (1)the electrodes are isolated from case; (2)high input impedance; (3)6 IGBTs built into 1 package; (4)enhancement-mode; (5)high speed; (6)low saturation voltage.

Diagrams

MG1000E
MG1000E

Other


Data Sheet

Negotiable 
MG1001
MG1001

Other


Data Sheet

Negotiable 
MG1001E
MG1001E

Other


Data Sheet

Negotiable 
MG1002E
MG1002E

Other


Data Sheet

Negotiable 
MG1004
MG1004

Other


Data Sheet

Negotiable 
MG1004E
MG1004E

Other


Data Sheet

Negotiable