(China (Mainland))
Product Summary
The K9LAG08U0M-PCB0 is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market.
Parametrics
Absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to + 4.6, VIN: -0.6 to + 4.6 V, VI/O: -0.6 to Vcc+0.3 (<4.6V); (2)Temperature Under Bias: -10 to +125℃; (3)Storage Temperature: -65 to +150 ℃; (4)Short Circuit Current: 5 mA.
Features
Features: (1)Voltage Supply : 2.7 V ~ 3.6 V; (2)Organization: Memory Cell Array : (2G + 64M)bit x 8bit, Data Register : (2K + 64)bit x8bit; (3)Automatic Program and Erase: Page Program : (2K + 64)Byte, Block Erase : (256K + 8K)Byte; (4)Page Read Operation: Page Size : (2K + 64)Byte, Random Read : 60μs(Max.), Serial Access : 30ns(Min.); (5)Memory Cell : 2bit / Memory Cell; (6)Fast Write Cycle Time: Program time : 800μs(Typ.), Block Erase Time : 1.5ms(Typ.).
Diagrams
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 K9LAG08U1M |
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Data Sheet |
Negotiable |
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K9LAG08U0M |
Other |
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Data Sheet |
Negotiable |
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